Navitas Semiconductor will present cutting-edge GaN and SiC technologies at electronica 2024, highlighting innovations for AI data centres, EVs, and renewable energy, aiming to drive efficiency and sustainability.
Navitas Semiconductor is set to showcase groundbreaking advancements in GaN (Gallium Nitride) and SiC (Silicon Carbide) technologies at the forthcoming electronica 2024 exhibition. The event is scheduled from November 12th to November 15th at the Trade Fair Center Messe München in Munich, Germany, where attendees can visit the company’s booth in Hall C3, booth number 129, to explore these innovations.
Under the theme “Electrify Our World,” Navitas promises to present a range of pioneering power solutions that span diverse applications. These include AI data centres, electric vehicle (EV) transportation, renewable energy systems, industrial drives, and consumer appliances. The focus will be on how next-generation GaN and SiC technology can result in higher power density, increased efficiency, longer range, and faster charging, while also benefiting from grid independence and portability. Importantly, the low-carbon-footprint potential of these technologies is expected to play a role in reducing CO2 emissions by over 6 gigatons annually by the year 2050.
Among the highlights, Navitas will introduce what is claimed to be the world’s first 8.5 kW power supply tailored for AI and hyperscale data centres. This innovation employs high-power GaNSafe power ICs along with Generation 3 Fast SiC MOSFETs. The GeneSiC technology, a product of over two decades of SiC innovation at Navitas, promises exceptional performance over a wide range of temperatures. These advancements in SiC MOSFETs offer the ability to cool run and switch faster, thereby supporting more powerful AI data centres and ensuring more efficient fast charging for electric vehicles.
The proprietary “trench-assisted planar” technology used in their Gen-3 Fast MOSFETs, according to Navitas, offers superior robustness, manufacturability, and competitive cost advantages. These high-efficiency, high-speed components operate at significantly lower temperatures and are said to have a lifespan up to three times longer than comparable SiC products from other vendors.
The showcase will also feature the latest GaNSense™ Motor Drives ICs for both domestic appliances and industrial applications. Additionally, Navitas will unveil a 650V bi-directional GaN demonstrator, as well as new SiCPAK™ modules aimed at high-power sectors such as power grids, renewable energy, EV charging infrastructure, and uninterruptible power supplies (UPS).
In a related event, Llew Vaughan-Edmunds of Navitas will take part in a panel debate hosted by EETimes on November 12th. Titled “SiC & GaN Technologies – Exploring Advancements, Addressing Challenges,” the discussion is set to explore recent innovations and upcoming trends that are poised to expand the market reach of wide bandgap technologies. Current predictions from the market analysis firm Yole Group suggest that GaN and SiC technologies are on track to comprise 30% of the power semiconductor market by 2027, which currently holds a valuation of $22 billion annually.
The electronica 2024 event serves as a key platform for industry leaders, innovators, and stakeholders to converge and exchange insights on cutting-edge technology trends that are set to shape the future of the electronics landscape. Interested attendees are encouraged to visit the Navitas booth for an immersive experience of the advancements that stand to redefine the efficiency and sustainability of power solutions across various high-demand sectors.
Source: Noah Wire Services
